{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10515679","patent":{"patent_number":"US-10515679","title":"Magneto-resistive memory structures with improved sensing, and associated sensing methods","assignee":null,"inventors":[],"filing_date":"2018-02-06T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A magneto-resistive memory (MRM) structure includes a source line and a first transistor that includes a source region and a drain region. The source line is electrically connected to the source region of the first transistor. The MRM structure further includes an MRM cell that includes an MRM transistor electrically in series with an MRM magnetic tunnel junction (MTJ). The MRM transistor is electrically connected to the drain region of the first transistor such that the MRM cell is electrically in series with the first transistor. Still further, the MRM structure further includes a voltage amplifier electrically connected to a mid-point node of the first transistor and the MRM transistor, a sense-amplifier electrically connected to the voltage amplifier, and a bit line electrically connected to the MRM MTJ of the MRM cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magneto-resistive memory structures with improved sensing, and associated sensing methods","description":"A magneto-resistive memory (MRM) structure includes a source line and a first transistor that includes a source region and a drain region. The source line is electrically connected to the source regio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10515679","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10515679","citation_suggestion":"Patentable. \"Magneto-resistive memory structures with improved sensing, and associated sensing methods\" (US-10515679). https://patentable.app/patents/US-10515679","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10515679","json":"https://patentable.app/api/llm-context/US-10515679","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:46:32.516Z"}