{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10515698","patent":{"patent_number":"US-10515698","title":"Ferroelectric memory device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2018-01-31T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":11,"abstract":"The ferroelectric memory device includes a substrate having a base doped region doped with a dopant of a first conductivity type and a trench disposed in the base doped region having an inner wall with a bottom and sidewalls. Also, the ferroelectric memory device includes a ferroelectric gate insulation layer, disposed along the inner wall of the trench, a gate electrode layer disposed on the ferroelectric gate insulation layer inside the trench, and a source region and a drain region, disposed in the substrate at respective ends of the trench and doped with a dopant of a second conductivity type. The ferroelectric memory device also includes a conductive well region, doped with a dopant of the second conductivity type. The conductive well region is disposed in the base doped region and spaced apart from the ferroelectric gate insulation layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ferroelectric memory device and method of manufacturing the same","description":"The ferroelectric memory device includes a substrate having a base doped region doped with a dopant of a first conductivity type and a trench disposed in the base doped region having an inner wall wit","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10515698","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10515698","citation_suggestion":"Patentable. \"Ferroelectric memory device and method of manufacturing the same\" (US-10515698). https://patentable.app/patents/US-10515698","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10515698","json":"https://patentable.app/api/llm-context/US-10515698","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:36:13.213Z"}