{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10515799","patent":{"patent_number":"US-10515799","title":"Methods for repairing substrate lattice and selective epitaxy processing","assignee":null,"inventors":[],"filing_date":"2018-07-26T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"The present disclosure describes patterned devices and methods for repairing substrate lattice damage in a patterned device. The patterned device includes a substrate, an alternating conductor and dielectric stack atop the substrate, a channel hole extending through the alternating conductor and dielectric stack to the substrate, and an epitaxial grown layer at a bottom of the channel hole and a top surface of the substrate. A part of the substrate in contact with the epitaxial grown layer has a dopant or doping concentration different from an adjacent part of the substrate. The method includes forming a channel hole in an insulating layer atop a substrate, forming an amorphous layer in a top side of the substrate below the channel hole, heating to crystallize the amorphous layer, and growing an epitaxial layer on the crystallized layer in the channel hole."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for repairing substrate lattice and selective epitaxy processing","description":"The present disclosure describes patterned devices and methods for repairing substrate lattice damage in a patterned device. The patterned device includes a substrate, an alternating conductor and die","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10515799","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10515799","citation_suggestion":"Patentable. \"Methods for repairing substrate lattice and selective epitaxy processing\" (US-10515799). https://patentable.app/patents/US-10515799","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10515799","json":"https://patentable.app/api/llm-context/US-10515799","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:36:37.994Z"}