{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10515800","patent":{"patent_number":"US-10515800","title":"Solid phase crystallization method and manufacturing method of low-temperature poly-silicon TFT substrate","assignee":null,"inventors":[],"filing_date":"2018-02-22T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A solid phase crystallization method of the present invention includes: providing amorphous silicon; heating the amorphous silicon to a first crystallization temperature; continuously heating the amorphous silicon to cause a temperature rise, in a first time period, from the first crystallization temperature to a second crystallization temperature, keeping the amorphous silicon in the second crystallization temperature for a predetermined time interval, causing a temperature drop of the amorphous silicon so as to gradually drop, in a second time period, from the second crystallization temperature to the first crystallization temperature, allowing continuous temperature drop of the amorphous silicon to reach the room temperature to thereby obtain low-temperature poly-silicon. The differences of temperature among various areas can be reduced when amorphous silicon starts to crystallize so that the difference of crystal nuclei growth rate among the various areas can be reduced to greatly improve homogeneity of grains formed through solid phase crystallization."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Solid phase crystallization method and manufacturing method of low-temperature poly-silicon TFT substrate","description":"A solid phase crystallization method of the present invention includes: providing amorphous silicon; heating the amorphous silicon to a first crystallization temperature; continuously heating the amor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10515800","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10515800","citation_suggestion":"Patentable. \"Solid phase crystallization method and manufacturing method of low-temperature poly-silicon TFT substrate\" (US-10515800). https://patentable.app/patents/US-10515800","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10515800","json":"https://patentable.app/api/llm-context/US-10515800","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T23:45:57.512Z"}