{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10515821","patent":{"patent_number":"US-10515821","title":"Method of achieving high selectivity for high aspect ratio dielectric etch","assignee":null,"inventors":[],"filing_date":"2018-06-26T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":15,"abstract":"Various embodiments herein relate to methods and apparatus for etching a feature in a substrate. Often, the feature is etched in the context of forming a DRAM device. The feature is etched in dielectric material, which often includes silicon oxide. The feature is etched using chemistry that includes WF6. Although WF6 is commonly used as a deposition gas (e.g., to deposit tungsten-containing film), it can also be used during etching. Advantageously, the inclusion of WF6 in the etch chemistry can increase the etch rate of the dielectric material, as well as increase the selectivity of the etch. Unexpectedly, these benefits can be realized without any increase in capping."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of achieving high selectivity for high aspect ratio dielectric etch","description":"Various embodiments herein relate to methods and apparatus for etching a feature in a substrate. Often, the feature is etched in the context of forming a DRAM device. The feature is etched in dielectr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10515821","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10515821","citation_suggestion":"Patentable. \"Method of achieving high selectivity for high aspect ratio dielectric etch\" (US-10515821). https://patentable.app/patents/US-10515821","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10515821","json":"https://patentable.app/api/llm-context/US-10515821","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:41:50.965Z"}