{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10515845","patent":{"patent_number":"US-10515845","title":"Semiconductor structure including isolations and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2018-02-22T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor structure including isolations includes receiving a substrate including a first region and a second region; forming a patterned hard mask, the patterned hard mask including a first opening exposing a portion of the first region and a second opening exposing a portion of the second region; removing portions of the substrate to form a first trench in the first region and to form a second trench in the second region; performing an ion implantation to a portion of the patterned hard mask in the first region and a portion of the substrate exposed from the first trench; enlarging the first opening to form a third opening over the first trench and enlarging the second opening to form a fourth opening over the second trench; and forming a first isolation by filling the first trench and a second isolation by filling the second trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure including isolations and method for manufacturing the same","description":"A method for manufacturing a semiconductor structure including isolations includes receiving a substrate including a first region and a second region; forming a patterned hard mask, the patterned hard","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10515845","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10515845","citation_suggestion":"Patentable. \"Semiconductor structure including isolations and method for manufacturing the same\" (US-10515845). https://patentable.app/patents/US-10515845","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10515845","json":"https://patentable.app/api/llm-context/US-10515845","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:39:01.696Z"}