{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10515848","patent":{"patent_number":"US-10515848","title":"Semiconductor package and method","assignee":null,"inventors":[],"filing_date":"2018-08-01T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"In an embodiment, a method includes: forming a first dielectric layer over a die, the first dielectric layer including a photo-sensitive material; curing the first dielectric layer to reduce photo-sensitivity of the first dielectric layer; patterning the first dielectric layer by etching to form a first opening; forming a first metallization pattern in the first opening of the first dielectric layer; forming a second dielectric layer over the first metallization pattern and the first dielectric layer, the second dielectric layer including the photo-sensitive material; patterning the second dielectric layer by exposure and development to form a second opening; and forming a second metallization pattern in the second opening of the second dielectric layer, the second metallization pattern electrically connected to the first metallization pattern."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor package and method","description":"In an embodiment, a method includes: forming a first dielectric layer over a die, the first dielectric layer including a photo-sensitive material; curing the first dielectric layer to reduce photo-sen","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10515848","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10515848","citation_suggestion":"Patentable. \"Semiconductor package and method\" (US-10515848). https://patentable.app/patents/US-10515848","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10515848","json":"https://patentable.app/api/llm-context/US-10515848","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T02:41:50.237Z"}