{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10515876","patent":{"patent_number":"US-10515876","title":"Method for forming semiconductor device and semiconductor device fabricated by the same","assignee":null,"inventors":[],"filing_date":"2018-10-15T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a semiconductor device includes: providing a structure having a first stop layer formed above a substrate, a first dielectric layer formed on the first stop layer, a second stop layer formed on the first dielectric layer, and conductive lines formed in the first dielectric layer and spaced apart from each other; forming a first dummy layer on the second stop layer; patterning the first dummy layer to form a first patterned dummy layer; forming a second dummy layer on the first dummy layer to form a first trench; etching back the second dummy layer and the first patterned dummy layer to form a second trench, wherein the second trench is self-aligned with the first trench. The second trench extends downwardly to the first dielectric layer and forms an opening at the second stop layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming semiconductor device and semiconductor device fabricated by the same","description":"A method for forming a semiconductor device includes: providing a structure having a first stop layer formed above a substrate, a first dielectric layer formed on the first stop layer, a second stop l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10515876","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10515876","citation_suggestion":"Patentable. \"Method for forming semiconductor device and semiconductor device fabricated by the same\" (US-10515876). https://patentable.app/patents/US-10515876","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10515876","json":"https://patentable.app/api/llm-context/US-10515876","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:36:21.069Z"}