{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10515902","patent":{"patent_number":"US-10515902","title":"Back-end-of-line (BEOL) arrangement with multi-height interlayer dielectric (ILD) structures","assignee":null,"inventors":[],"filing_date":"2018-01-15T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Among other things, one or more semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. A layer, such as a poly layer or an inter layer dielectric (ILD) layer, is formed over a substrate. A photoresist mask is formed over the layer. The photoresist mask comprises an open region overlaying a target region of the layer and comprises a protection region overlaying a second region of the layer. An etching process is performed through the open region to reduce a height of the layer in the target region in relation to a height of the layer in the second region because the protection region inhibits the etching process from affecting the layer in the second region. A first structure, having a first height, is formed within the target region. A second structure, having a second height greater than the first height, is formed within the second region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Back-end-of-line (BEOL) arrangement with multi-height interlayer dielectric (ILD) structures","description":"Among other things, one or more semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. A layer, such as a poly layer or an inter layer dielectric (ILD) la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10515902","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10515902","citation_suggestion":"Patentable. \"Back-end-of-line (BEOL) arrangement with multi-height interlayer dielectric (ILD) structures\" (US-10515902). https://patentable.app/patents/US-10515902","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10515902","json":"https://patentable.app/api/llm-context/US-10515902","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:59:21.187Z"}