{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10515903","patent":{"patent_number":"US-10515903","title":"Selective CVD alignment-mark topography assist for non-volatile memory","assignee":null,"inventors":[],"filing_date":"2018-05-18T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A semiconductor device and method for forming the semiconductor device are described. The method includes recessing a device pad to below a top surface of an interconnect layer and depositing a cap in the recess over the device pad. A topography assist layer is formed over each of at least one alignment mark using a selective deposition process that deposits material on conductive material of the at least one alignment mark selective to the metal nitride of the device pad such that a top surface of the topography assist feature is higher than a top surface of the cap. Device layers are deposited conformally over the interconnect layer such that the topography assist layer causes a topographical feature in a top surface of the deposited device layers, the topographical feature being vertically aligned with the topography assist layer. The device pad is aligned according to the topographical feature."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Selective CVD alignment-mark topography assist for non-volatile memory","description":"A semiconductor device and method for forming the semiconductor device are described. The method includes recessing a device pad to below a top surface of an interconnect layer and depositing a cap in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10515903","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10515903","citation_suggestion":"Patentable. \"Selective CVD alignment-mark topography assist for non-volatile memory\" (US-10515903). https://patentable.app/patents/US-10515903","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10515903","json":"https://patentable.app/api/llm-context/US-10515903","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:31:45.710Z"}