{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10515945","patent":{"patent_number":"US-10515945","title":"Method and structure for semiconductor mid-end-of-year (MEOL) process","assignee":null,"inventors":[],"filing_date":"2018-12-10T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a first conductive structure directly over an isolation structure; a second conductive structure directly over an active region; a first dielectric layer over the first and second conductive structures; a second dielectric layer over the first dielectric layer, wherein the first and second dielectric layers include different materials; a first conductive feature contacting the first conductive structure through at least the first and second dielectric layers; and a second conductive feature contacting the second conductive structure through at least the first and second dielectric layers, wherein the first and second conductive features include a same metal."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and structure for semiconductor mid-end-of-year (MEOL) process","description":"A semiconductor device includes a first conductive structure directly over an isolation structure; a second conductive structure directly over an active region; a first dielectric layer over the first","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10515945","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10515945","citation_suggestion":"Patentable. \"Method and structure for semiconductor mid-end-of-year (MEOL) process\" (US-10515945). https://patentable.app/patents/US-10515945","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10515945","json":"https://patentable.app/api/llm-context/US-10515945","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:43:57.166Z"}