{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10515952","patent":{"patent_number":"US-10515952","title":"Fin field effect transistor (FinFET) device structure and method for forming the same","assignee":null,"inventors":[],"filing_date":"2017-08-04T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A FinFET device structure and method for forming the same are provided. The FinFET device structure includes a first fin structure extending above a substrate, and the first fin structure includes a portion made of silicon germanium (SiGe). The FinFET device structure includes a second fin structure adjacent to the first fin structure. The FinFET device structure also includes a first liner layer formed on the outer sidewall surface of the first fin structure and a second liner layer formed on the inner sidewall surface of the first fin structure. The FinFET device structure further includes a first isolation structure formed on the substrate, and the first liner layer is between the first isolation structure and the first fin structure, and a top surface of the second liner layer is higher than a top surface of the first liner layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field effect transistor (FinFET) device structure and method for forming the same","description":"A FinFET device structure and method for forming the same are provided. The FinFET device structure includes a first fin structure extending above a substrate, and the first fin structure includes a p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10515952","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10515952","citation_suggestion":"Patentable. \"Fin field effect transistor (FinFET) device structure and method for forming the same\" (US-10515952). https://patentable.app/patents/US-10515952","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10515952","json":"https://patentable.app/api/llm-context/US-10515952","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:32:23.020Z"}