{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10515975","patent":{"patent_number":"US-10515975","title":"Method for forming dual-deck channel hole structure of three-dimensional memory device","assignee":null,"inventors":[],"filing_date":"2018-07-26T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a channel hole structure of a 3D memory device is disclosed. The method includes: forming a first alternating dielectric stack and a first insulating layer on a substrate; forming a first channel structure in a first channel hole penetrating the first insulating layer and the first alternating dielectric stack; forming a sacrificial inter-deck plug in the first insulating layer; forming a second alternating dielectric stack on the sacrificial inter-deck plug; forming a second channel hole penetrating the second alternating dielectric stack and expose a portion of the sacrificial inter-deck plug; removing the sacrificial inter-deck plug to form a cavity; and forming an inter-deck channel plug in the cavity and a second channel structure in the second channel hole, the inter-deck channel plug contacts the first channel structure and the second channel structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming dual-deck channel hole structure of three-dimensional memory device","description":"A method for forming a channel hole structure of a 3D memory device is disclosed. The method includes: forming a first alternating dielectric stack and a first insulating layer on a substrate; forming","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10515975","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10515975","citation_suggestion":"Patentable. \"Method for forming dual-deck channel hole structure of three-dimensional memory device\" (US-10515975). https://patentable.app/patents/US-10515975","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10515975","json":"https://patentable.app/api/llm-context/US-10515975","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:13:51.229Z"}