{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10515997","patent":{"patent_number":"US-10515997","title":"Memory device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2018-09-20T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":7,"abstract":"A memory device according to an embodiment includes: a first conductive layer, a second conductive layer, a third conductive layer and a fourth conductive layer parallel to a first direction and a second direction perpendicular to the first direction, and stacked in a third direction perpendicular to the first direction; a first, electrode connected to the first conductive layer; a second electrode connected to the second conductive layer; a third electrode connected to the third conductive layer; and a fourth electrode connected to the fourth conductive layer. The third conductive layer and the fourth conductive layer are not provided between the first electrode and the second electrode. The fourth conductive layer is not provided between the second electrode and the third electrode. A region without the second conductive layer is provided between the second electrode and the third electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device and method for manufacturing the same","description":"A memory device according to an embodiment includes: a first conductive layer, a second conductive layer, a third conductive layer and a fourth conductive layer parallel to a first direction and a sec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10515997","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10515997","citation_suggestion":"Patentable. \"Memory device and method for manufacturing the same\" (US-10515997). https://patentable.app/patents/US-10515997","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10515997","json":"https://patentable.app/api/llm-context/US-10515997","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:06:53.811Z"}