{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10516020","patent":{"patent_number":"US-10516020","title":"Semiconductor device including crystal defect region and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2017-08-29T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes: an n type semiconductor layer including an active region and an inactive region; an element structure formed in the active region and including at least an active side p type layer to form pn junction with n type portion of the n type semiconductor layer; an inactive side p type layer formed in the inactive region and forming pn junction with the n type portion of the n type semiconductor layer; a first electrode electrically connected to the active side p type layer in a front surface of the n type semiconductor layer; a second electrode electrically connected to the n type portion of the n type semiconductor layer in a rear surface of the n type semiconductor layer; and a crystal defect region formed in both the active region and the inactive region and having different depths in the active region and the inactive region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including crystal defect region and method for manufacturing the same","description":"A semiconductor device includes: an n type semiconductor layer including an active region and an inactive region; an element structure formed in the active region and including at least an active side","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10516020","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10516020","citation_suggestion":"Patentable. \"Semiconductor device including crystal defect region and method for manufacturing the same\" (US-10516020). https://patentable.app/patents/US-10516020","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10516020","json":"https://patentable.app/api/llm-context/US-10516020","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:17:50.009Z"}