{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10516021","patent":{"patent_number":"US-10516021","title":"Reduced leakage transistors with germanium-rich channel regions","assignee":null,"inventors":[],"filing_date":"2015-12-24T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Techniques are disclosed for fabricating semiconductor transistor devices configured with a sub-fin insulation layer that reduces parasitic leakage (i.e., current leakage through a portion of an underlying substrate between a source region and a drain region associated with a transistor). The parasitic leakage is reduced by fabricating transistors with a sacrificial layer in a sub-fin region of the substrate below at least a channel region of the fin. During processing, the sacrificial layer in the sub-fin region is removed and replaced, either in whole or in part, with a dielectric material. The dielectric material increases the electrical resistivity of the substrate between corresponding source and drain portions of the fin, thus reducing parasitic leakage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Reduced leakage transistors with germanium-rich channel regions","description":"Techniques are disclosed for fabricating semiconductor transistor devices configured with a sub-fin insulation layer that reduces parasitic leakage (i.e., current leakage through a portion of an under","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10516021","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10516021","citation_suggestion":"Patentable. \"Reduced leakage transistors with germanium-rich channel regions\" (US-10516021). https://patentable.app/patents/US-10516021","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10516021","json":"https://patentable.app/api/llm-context/US-10516021","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:06:32.516Z"}