{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10516022","patent":{"patent_number":"US-10516022","title":"Method for manufacturing a semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-06-04T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A wide bandgap semiconductor device is comprising an (n−) doped drift layer between a first main side and a second main side. On the first main side, n doped source regions are arranged which are laterally surrounded by p doped channel layers having a channel layer depth. P+ doped well layers having a well layer depth, which is at least as large as the channel layer depth is arranged at the bottom of the source regions. A p++ doped plug extends from a depth, which is at least as deep as the source layer depth and less deep than the well layer depth, to a plug depth, which is as least as deep as the well layer depth, and having a higher doping concentration than the well layers, is arranged between the source regions and well layers. On the first main side, an ohmic contact contacts as a first main electrode the source regions, the well layers and the plug."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing a semiconductor device","description":"A wide bandgap semiconductor device is comprising an (n−) doped drift layer between a first main side and a second main side. On the first main side, n doped source regions are arranged which are late","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10516022","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10516022","citation_suggestion":"Patentable. \"Method for manufacturing a semiconductor device\" (US-10516022). https://patentable.app/patents/US-10516022","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10516022","json":"https://patentable.app/api/llm-context/US-10516022","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:23:42.126Z"}