{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10516023","patent":{"patent_number":"US-10516023","title":"High electron mobility transistor with deep charge carrier gas contact structure","assignee":null,"inventors":[],"filing_date":"2018-03-06T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":21,"abstract":"A method of forming a semiconductor device includes providing a heterojunction semiconductor body. The heterojunction semiconductor body includes a type III-V semiconductor back-barrier region, a type III-V semiconductor channel layer formed on the back-barrier region, and a type III-V semiconductor barrier layer formed on the back-barrier region. A first two-dimensional charge carrier gas is at an interface between the channel and barrier layers. A second two-dimensional charge carrier gas is disposed below the first two-dimensional charge carrier gas. A deep contact structure in the heterojunction semiconductor body that extends through the channel layer and forms an interface with the second two-dimensional charge carrier gas is formed. The first semiconductor region includes a first contact material that provides a conductive path for majority carriers of the second two-dimensional charge carrier gas at the interface with the second two-dimensional charge carrier gas."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High electron mobility transistor with deep charge carrier gas contact structure","description":"A method of forming a semiconductor device includes providing a heterojunction semiconductor body. The heterojunction semiconductor body includes a type III-V semiconductor back-barrier region, a type","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10516023","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10516023","citation_suggestion":"Patentable. \"High electron mobility transistor with deep charge carrier gas contact structure\" (US-10516023). https://patentable.app/patents/US-10516023","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10516023","json":"https://patentable.app/api/llm-context/US-10516023","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:14:04.237Z"}