{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10516031","patent":{"patent_number":"US-10516031","title":"Method of forming the gate electrode of field effect transistor","assignee":null,"inventors":[],"filing_date":"2017-10-31T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method of fabricating a semiconductor device includes depositing a contact etch stop layer (CESL) over a dummy gate electrode, a source/drain (S/D) region and an isolation feature. The method further includes performing a first CMP to expose the dummy gate electrode. The method further includes removing an upper portion of the CESL. The method further includes performing a second CMP using a slurry different from the first CMP to expose the CESL over the S/D region, wherein, following the second CMP, an entire top surface of the CESL over the S/D region and over the isolation feature is substantially level with a top surface of the dummy gate electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming the gate electrode of field effect transistor","description":"A method of fabricating a semiconductor device includes depositing a contact etch stop layer (CESL) over a dummy gate electrode, a source/drain (S/D) region and an isolation feature. The method furthe","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10516031","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10516031","citation_suggestion":"Patentable. \"Method of forming the gate electrode of field effect transistor\" (US-10516031). https://patentable.app/patents/US-10516031","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10516031","json":"https://patentable.app/api/llm-context/US-10516031","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:35:56.593Z"}