{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10516037","patent":{"patent_number":"US-10516037","title":"Method of forming shaped source/drain epitaxial layers of a semiconductor device","assignee":null,"inventors":[],"filing_date":"2017-11-01T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"In a method for manufacturing a semiconductor device, an isolation insulating layer is formed over a fin structure. A first portion of the fin structure is exposed from and a second portion of the fin structure is embedded in the isolation insulating layer. A dielectric layer is formed over sidewalls of the first portion of the fin structure. The first portion of the fin structure and a part of the second portion of the fin structure in a source/drain region are removed, thereby forming a trench. A source/drain epitaxial structure is formed in the trench using one of a first process or a second process. The first process comprises an enhanced epitaxial growth process having an enhanced growth rate for a preferred crystallographic facet, and the second process comprises using a modified etch process to reduce a width of the source/drain epitaxial structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming shaped source/drain epitaxial layers of a semiconductor device","description":"In a method for manufacturing a semiconductor device, an isolation insulating layer is formed over a fin structure. A first portion of the fin structure is exposed from and a second portion of the fin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10516037","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10516037","citation_suggestion":"Patentable. \"Method of forming shaped source/drain epitaxial layers of a semiconductor device\" (US-10516037). https://patentable.app/patents/US-10516037","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10516037","json":"https://patentable.app/api/llm-context/US-10516037","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:38:28.950Z"}