{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10516039","patent":{"patent_number":"US-10516039","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2018-06-13T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L"],"num_claims":20,"abstract":"A tunnel field-effect transistor (TFET), comprising a first source/drain layer comprising a first polar sidewall; a second source/drain layer surrounding the first source/drain layer, wherein the second source/drain layer and the first source/drain layer are of opposite conductivity types; and a semiconductor interlayer between the second source/drain layer and first polar sidewall of the first source/drain layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A tunnel field-effect transistor (TFET), comprising a first source/drain layer comprising a first polar sidewall; a second source/drain layer surrounding the first source/drain layer, wherein the seco","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10516039","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10516039","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-10516039). https://patentable.app/patents/US-10516039","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10516039","json":"https://patentable.app/api/llm-context/US-10516039","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T08:29:31.112Z"}