{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10516040","patent":{"patent_number":"US-10516040","title":"Method of forming epitaxial silicon layer and semiconductor device thereof","assignee":null,"inventors":[],"filing_date":"2018-04-24T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of manufacturing a semiconductor device includes: providing a substrate including a first semiconductive region of a first conductive type and gate structures over the first semiconductive region, where a gap between the gate structures exposes a portion of the first semiconductive region; and forming a second semiconductive region of a second conductive type in the gap starting from the exposed portion of the first semiconductive region. The forming of the second semiconductive region includes: growing, in a chamber, an epitaxial silicon-rich layer with a first growth rate around a sidewall adjacent to the gate structures that is greater than a second growth rate at a central portion; and, in the chamber, partially removing the epitaxial silicon-rich layer with an etchant with a first etching rate around the sidewall adjacent to the gate structures that is greater than a second etching rate at the central portion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming epitaxial silicon layer and semiconductor device thereof","description":"A method of manufacturing a semiconductor device includes: providing a substrate including a first semiconductive region of a first conductive type and gate structures over the first semiconductive re","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10516040","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10516040","citation_suggestion":"Patentable. \"Method of forming epitaxial silicon layer and semiconductor device thereof\" (US-10516040). https://patentable.app/patents/US-10516040","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10516040","json":"https://patentable.app/api/llm-context/US-10516040","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:24:20.718Z"}