{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10516042","patent":{"patent_number":"US-10516042","title":"III group nitride semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-04-15T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"An III group nitride semiconductor device comprises: a substrate; a nitride semiconductor layer located on the substrate; a passivation layer located on the nitride semiconductor layer, a portion of the passivation layer in a gate region being etched to expose the nitride semiconductor layer so as to form a gate groove; a composite dielectric layer located on the passivation layer and the gate groove, the composite dielectric layer comprising one or more combination structures of two or more of a nitride dielectric layer, an oxynitride dielectric layer and an oxide dielectric layer which are formed sequentially in the direction away from the substrate; and a source electrode and a drain electrode respectively located in a source region and a drain region on the nitride semiconductor layer, and a gate electrode located in a gate region between the source region and the drain region on the composite dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"III group nitride semiconductor device and manufacturing method thereof","description":"An III group nitride semiconductor device comprises: a substrate; a nitride semiconductor layer located on the substrate; a passivation layer located on the nitride semiconductor layer, a portion of t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10516042","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10516042","citation_suggestion":"Patentable. \"III group nitride semiconductor device and manufacturing method thereof\" (US-10516042). https://patentable.app/patents/US-10516042","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10516042","json":"https://patentable.app/api/llm-context/US-10516042","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:38:59.541Z"}