{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10516058","patent":{"patent_number":"US-10516058","title":"Low temperature polysilicon thin film transistor and preparation method thereof","assignee":null,"inventors":[],"filing_date":"2017-08-21T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"The present invention discloses a preparation method of a low temperature polysilicon thin film transistor including: successively forming a polysilicon active layer and a gate insulating layer covering the active layer on a base substrate; implanting nitrogen ions on a surface of the polysilicon active layer facing the gate insulating layer by an ion implantation process to form an ion implantation layer; and recrystallizing the ion implantation layer by a high temperature annealing process to form a silicon nitride spacing layer between the polysilicon active layer and the gate insulating layer. The present invention also provides a low temperature polysilicon thin film transistor including a polysilicon active layer, a gate insulating layer, a gate electrode, a source electrode and a drain electrode successively provided on a base substrate, wherein a connection interface between the polysilicon active layer and the gate insulating layer is formed with a silicon nitride spacing layer, and the silicon nitride spacing layer and the polysilicon active layer are in a integrally interconnected structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low temperature polysilicon thin film transistor and preparation method thereof","description":"The present invention discloses a preparation method of a low temperature polysilicon thin film transistor including: successively forming a polysilicon active layer and a gate insulating layer coveri","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10516058","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10516058","citation_suggestion":"Patentable. \"Low temperature polysilicon thin film transistor and preparation method thereof\" (US-10516058). https://patentable.app/patents/US-10516058","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10516058","json":"https://patentable.app/api/llm-context/US-10516058","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:02:05.183Z"}