{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10516096","patent":{"patent_number":"US-10516096","title":"Magnetic random access memory structures, integrated circuits, and methods for fabricating the same","assignee":null,"inventors":[],"filing_date":"2018-03-28T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["B82Y","G11C","G11C","G11C","G11C"],"num_claims":18,"abstract":"Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode and a base layer over the bottom electrode. The base layer includes a seed layer and a roughness suppression layer. The spin transfer torque magnetic random access memory structure further includes a hard layer over the base layer. Also, the spin transfer torque magnetic random access memory structure includes a magnetic tunnel junction (MTJ) element with a perpendicular orientation over the hard layer and a top electrode over the MTJ element."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic random access memory structures, integrated circuits, and methods for fabricating the same","description":"Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random acce","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10516096","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10516096","citation_suggestion":"Patentable. \"Magnetic random access memory structures, integrated circuits, and methods for fabricating the same\" (US-10516096). https://patentable.app/patents/US-10516096","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10516096","json":"https://patentable.app/api/llm-context/US-10516096","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:36:25.182Z"}