{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10516104","patent":{"patent_number":"US-10516104","title":"High retention resistive random access memory","assignee":null,"inventors":[],"filing_date":"2015-09-25T00:00:00.000Z","publication_date":"2019-12-24T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":8,"abstract":"An embodiment includes a memory comprising: a top electrode and a bottom electrode; an oxygen exchange layer (OEL) between the top and bottom electrodes; a first oxide layer between the OEL and the bottom electrode; and a second oxide layer between the first oxide layer and the bottom electrode; wherein (a) a first plurality of oxygen vacancies are within the first oxide layer and are adjacent the OEL at a first concentration, (b) a second plurality of oxygen vacancies are within the first oxide layer and are adjacent the second oxide layer at a second concentration that is less than the first concentration, and (c) the first oxide layer includes a first oxide material different from a second oxide material included in the second oxide layer. Other embodiments are described herein."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High retention resistive random access memory","description":"An embodiment includes a memory comprising: a top electrode and a bottom electrode; an oxygen exchange layer (OEL) between the top and bottom electrodes; a first oxide layer between the OEL and the bo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10516104","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10516104","citation_suggestion":"Patentable. \"High retention resistive random access memory\" (US-10516104). https://patentable.app/patents/US-10516104","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10516104","json":"https://patentable.app/api/llm-context/US-10516104","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:38:34.227Z"}