{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522232","patent":{"patent_number":"US-10522232","title":"Memory device with vpass step to reduce hot carrier injection type of program disturb","assignee":null,"inventors":[],"filing_date":"2018-05-18T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"Apparatuses and techniques are described for reducing an injection type of program disturb in a memory device. A voltage on a selected word line is increased in a first step from an initial level such as 0 V to an intermediate, pass level such as Vpass, and in a second step from Vpass to a peak program level of Vpgm. A voltage on an adjacent unselected word line can be increased from the initial level to Vpass and then temporarily increased to an elevated level of Vpass_el during the second step increase on the selected word line. This helps reduce the magnitude of a channel gradient between the selected word line and the adjacent word line. The increase to Vpass_el may be implemented for program loops in the later part of a program operation, when Vpgm and the risk of program disturb is relatively high."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device with vpass step to reduce hot carrier injection type of program disturb","description":"Apparatuses and techniques are described for reducing an injection type of program disturb in a memory device. A voltage on a selected word line is increased in a first step from an initial level such","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522232","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522232","citation_suggestion":"Patentable. \"Memory device with vpass step to reduce hot carrier injection type of program disturb\" (US-10522232). https://patentable.app/patents/US-10522232","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522232","json":"https://patentable.app/api/llm-context/US-10522232","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:40:06.823Z"}