{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522343","patent":{"patent_number":"US-10522343","title":"Method of enhancing high-k film nucleation rate and electrical mobility in a semiconductor device by microwave plasma treatment","assignee":null,"inventors":[],"filing_date":"2015-03-02T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a semiconductor device is provided in several embodiments. According to one embodiment, the method includes providing a substrate in a process chamber, flowing a process gas consisting of hydrogen (H2) and optionally a noble gas into the process chamber, forming plasma excited species from the process gas by a microwave plasma source. The method further includes exposing an interface layer on the substrate to the plasma excited species to form a modified interface layer, and depositing a high dielectric constant (high-k) film by atomic layer deposition (ALD) on the modified interface layer. In some embodiments, the modified interface layer has higher electrical mobility than the interface layer, and the high-k film nucleates at a higher rate on the modified interface layer rate than on the interface layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of enhancing high-k film nucleation rate and electrical mobility in a semiconductor device by microwave plasma treatment","description":"A method for forming a semiconductor device is provided in several embodiments. According to one embodiment, the method includes providing a substrate in a process chamber, flowing a process gas consi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522343","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522343","citation_suggestion":"Patentable. \"Method of enhancing high-k film nucleation rate and electrical mobility in a semiconductor device by microwave plasma treatment\" (US-10522343). https://patentable.app/patents/US-10522343","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522343","json":"https://patentable.app/api/llm-context/US-10522343","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:13:03.598Z"}