{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522363","patent":{"patent_number":"US-10522363","title":"Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer","assignee":null,"inventors":[],"filing_date":"2018-07-24T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":30,"abstract":"Methods and systems for forming a device structure free of a substrate are described. Exemplary embodiments include a device structure comprising of device layers, a release layer, an etch stop layer, and a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device layers from the substrate. The device structure can include a contact layer, an etch stop layer, or both in some embodiments."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer","description":"Methods and systems for forming a device structure free of a substrate are described. Exemplary embodiments include a device structure comprising of device layers, a release layer, an etch stop layer,","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522363","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522363","citation_suggestion":"Patentable. \"Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer\" (US-10522363). https://patentable.app/patents/US-10522363","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522363","json":"https://patentable.app/api/llm-context/US-10522363","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:33:55.624Z"}