{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522364","patent":{"patent_number":"US-10522364","title":"Method of manufacturing semiconductor device and semiconductor device by the same","assignee":null,"inventors":[],"filing_date":"2018-08-01T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"A method including forming hard mask patterns on a substrate; forming etch stop patterns surrounding the hard mask patterns; forming spacer patterns covering sidewalls of the etch stop patterns; removing the etch stop patterns; etching the substrate to form active and dummy fins; forming a block mask pattern layer surrounding the active and dummy fins and forming mask etch patterns on a top surface of the block mask pattern layer; etching the block mask pattern layer to form block mask patterns surrounding the active fins; etching the dummy fins; removing the block mask patterns surrounding the active fins; and depositing a device isolation film on the substrate such that the device isolation film is not in contact with the upper portions of the active fins, wherein a spacing distance between the active fin and the dummy fin is greater than an active fin spacing distance between the active fins."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device and semiconductor device by the same","description":"A method including forming hard mask patterns on a substrate; forming etch stop patterns surrounding the hard mask patterns; forming spacer patterns covering sidewalls of the etch stop patterns; remov","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522364","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522364","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device and semiconductor device by the same\" (US-10522364). https://patentable.app/patents/US-10522364","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522364","json":"https://patentable.app/api/llm-context/US-10522364","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:15:00.423Z"}