{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522366","patent":{"patent_number":"US-10522366","title":"Method of fabricating semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-09-17T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Disclosed is a method of fabricating a semiconductor device. The method includes forming a lower layer on a substrate, forming on the lower layer a sacrificial layer and an etching pattern, forming a first spacer layer on the sacrificial layer and the etching pattern, etching the sacrificial layer and the first spacer layer to form a sacrificial pattern and a first spacer on at least a portion of a top surface of the sacrificial pattern, forming a second spacer layer on the sacrificial pattern and the first spacer, etching the second spacer layer and the first spacer to form a second spacer on a sidewall of the sacrificial pattern, and partially etching the lower layer to form a pattern. The second spacer is used as an etching mask to partially etch the lower layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating semiconductor device","description":"Disclosed is a method of fabricating a semiconductor device. The method includes forming a lower layer on a substrate, forming on the lower layer a sacrificial layer and an etching pattern, forming a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522366","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522366","citation_suggestion":"Patentable. \"Method of fabricating semiconductor device\" (US-10522366). https://patentable.app/patents/US-10522366","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522366","json":"https://patentable.app/api/llm-context/US-10522366","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:35:58.446Z"}