{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522399","patent":{"patent_number":"US-10522399","title":"Physical vapor deposition process for semiconductor interconnection structures","assignee":null,"inventors":[],"filing_date":"2018-11-30T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure provides methods for forming a conductive fill material (e.g., a conductive feature) by a physical vapor deposition (PVD) process. In one embodiment, a method of forming a conductive fill material on a substrate includes maintaining a first substrate temperature at a first range for a first period of time while forming a pre-layer of a conductive fill material on a substrate, providing a thermal energy to the substrate to maintain the substrate at a second substrate temperature at a second range for a second period of time, wherein the second substrate temperature is higher than the first substrate temperature, and continuously providing the thermal energy to the substrate to maintain the substrate a third substrate temperature at a third range for a third period of time to form a bulk layer of the conductive fill material on the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Physical vapor deposition process for semiconductor interconnection structures","description":"The present disclosure provides methods for forming a conductive fill material (e.g., a conductive feature) by a physical vapor deposition (PVD) process. In one embodiment, a method of forming a condu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522399","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522399","citation_suggestion":"Patentable. \"Physical vapor deposition process for semiconductor interconnection structures\" (US-10522399). https://patentable.app/patents/US-10522399","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522399","json":"https://patentable.app/api/llm-context/US-10522399","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:16:29.304Z"}