{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522410","patent":{"patent_number":"US-10522410","title":"Performing concurrent diffusion break, gate and source/drain contact cut etch processes","assignee":null,"inventors":[],"filing_date":"2018-04-20T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A device is formed including fins formed above a substrate, an isolation structure between the fins, a plurality of structures defining gate cavities, and a first dielectric material positioned between the structures. A patterning layer above the first dielectric material and in the gate cavities has a first opening positioned above a first gate cavity exposing a portion of the isolation structure and defining a first recess, a second opening above a second gate cavity exposing a first portion of the fins, and a third opening above a first portion of a source/drain region in the fins to expose the first dielectric material. Using the patterning layer, a second recess is formed in the substrate and a third recess is defined in the first dielectric material. A second dielectric material is formed in the recesses to define a gate cut structure, a diffusion break structure, and a contact cut structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Performing concurrent diffusion break, gate and source/drain contact cut etch processes","description":"A device is formed including fins formed above a substrate, an isolation structure between the fins, a plurality of structures defining gate cavities, and a first dielectric material positioned betwee","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522410","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522410","citation_suggestion":"Patentable. \"Performing concurrent diffusion break, gate and source/drain contact cut etch processes\" (US-10522410). https://patentable.app/patents/US-10522410","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522410","json":"https://patentable.app/api/llm-context/US-10522410","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:04:27.511Z"}