{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522413","patent":{"patent_number":"US-10522413","title":"Method of forming source/drain contact","assignee":null,"inventors":[],"filing_date":"2018-12-21T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"Methods are disclosed herein for fabricating semiconductor devices having shared source/drain contacts. An exemplary semiconductor device includes a high-k/metal gate stack disposed over a substrate. The high-k/metal gate stack is disposed between a first source/drain feature and a second source/drain feature. A first spacer set is disposed along sidewalls of the high-k/metal gate stack. A first interlevel dielectric (ILD) layer is disposed over the substrate. Upper portions of the first spacer set that extend above the first ILD layer have a tapered width. A second spacer set is disposed on the upper portions of the first spacer set and over the first ILD layer. A second ILD layer is disposed over the first ILD layer. A contact feature extends through the second ILD layer to the first source/drain feature and the second source/drain feature. The contact feature spans uninterrupted between the first source/drain feature and the second source/drain feature."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming source/drain contact","description":"Methods are disclosed herein for fabricating semiconductor devices having shared source/drain contacts. An exemplary semiconductor device includes a high-k/metal gate stack disposed over a substrate. ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522413","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522413","citation_suggestion":"Patentable. \"Method of forming source/drain contact\" (US-10522413). https://patentable.app/patents/US-10522413","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522413","json":"https://patentable.app/api/llm-context/US-10522413","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:04:54.424Z"}