{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522417","patent":{"patent_number":"US-10522417","title":"FinFET device with different liners for PFET and NFET and method of fabricating thereof","assignee":null,"inventors":[],"filing_date":"2017-10-05T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a P-type Field Effect Transistor (PFET) and an NFET. The PFET includes an N-well disposed in a substrate, a first fin structure disposed over the N-well, a first liner layer disposed over the N-well, and a second liner layer disposed over the first liner layer. The first liner layer and the second liner layer include different materials. The NFET includes a P-well disposed in the substrate, a second fin structure disposed over the P-well, a third liner layer disposed over the P-well. The third liner layer and the second liner layer include the same materials."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET device with different liners for PFET and NFET and method of fabricating thereof","description":"A semiconductor device includes a P-type Field Effect Transistor (PFET) and an NFET. The PFET includes an N-well disposed in a substrate, a first fin structure disposed over the N-well, a first liner ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522417","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522417","citation_suggestion":"Patentable. \"FinFET device with different liners for PFET and NFET and method of fabricating thereof\" (US-10522417). https://patentable.app/patents/US-10522417","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522417","json":"https://patentable.app/api/llm-context/US-10522417","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:43:18.743Z"}