{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522419","patent":{"patent_number":"US-10522419","title":"Stacked field-effect transistors (FETs) with shared and non-shared gates","assignee":null,"inventors":[],"filing_date":"2019-04-03T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a plurality of stacked gate regions spaced apart from each other on a substrate, a plurality of first epitaxial source/drain regions between the plurality of stacked gate regions, wherein the first epitaxial source/drain regions extend from sides of the plurality of stacked gate regions in a first doped region, a plurality of second epitaxial source/drain regions between the plurality of stacked gate regions and positioned over the first epitaxial source/drain regions, wherein the second epitaxial source/drain regions extend from sides of the plurality of stacked gate regions in a second doped region, and a contact region extending through a second epitaxial source/drain region of the plurality of second epitaxial source/drain regions to a first epitaxial source/drain region of the plurality of first epitaxial source/drain regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Stacked field-effect transistors (FETs) with shared and non-shared gates","description":"A semiconductor device includes a plurality of stacked gate regions spaced apart from each other on a substrate, a plurality of first epitaxial source/drain regions between the plurality of stacked ga","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522419","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522419","citation_suggestion":"Patentable. \"Stacked field-effect transistors (FETs) with shared and non-shared gates\" (US-10522419). https://patentable.app/patents/US-10522419","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522419","json":"https://patentable.app/api/llm-context/US-10522419","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:04:30.203Z"}