{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522424","patent":{"patent_number":"US-10522424","title":"FinFET doping methods and structures thereof","assignee":null,"inventors":[],"filing_date":"2017-02-27T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for fabricating a semiconductor device having a substantially undoped channel region includes providing a substrate having a fin extending from the substrate. An in-situ doped layer is formed on the fin. By way of example, the in-situ doped layer may include an in-situ doped well region formed by an epitaxial growth process. In some examples, the in-situ doped well region includes an N-well or a P-well region. After formation of the in-situ doped layer on the fin, an undoped layer is formed on the in-situ doped layer, and a gate stack is formed over the undoped layer. The undoped layer may include an undoped channel region formed by an epitaxial growth process. In various examples, a source region and a drain region are formed adjacent to and on either side of the undoped channel region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET doping methods and structures thereof","description":"A method for fabricating a semiconductor device having a substantially undoped channel region includes providing a substrate having a fin extending from the substrate. An in-situ doped layer is formed","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522424","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522424","citation_suggestion":"Patentable. \"FinFET doping methods and structures thereof\" (US-10522424). https://patentable.app/patents/US-10522424","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522424","json":"https://patentable.app/api/llm-context/US-10522424","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:36:49.926Z"}