{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522449","patent":{"patent_number":"US-10522449","title":"Packages with Si-substrate-free interposer and method forming same","assignee":null,"inventors":[],"filing_date":"2017-07-03T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, etching the plurality of dielectric layers to form an opening, filling the opening to form a through-dielectric via penetrating through the plurality of dielectric layers, forming a dielectric layer over the through-dielectric via and the plurality of dielectric layers, forming a plurality of bond pads in the dielectric layer, bonding a device die to the dielectric layer and a first portion of the plurality of bond pads through hybrid bonding, and bonding a die stack to through-silicon vias in the device die."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Packages with Si-substrate-free interposer and method forming same","description":"A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, etching the plurality of dielectric layers to form an ope","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522449","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522449","citation_suggestion":"Patentable. \"Packages with Si-substrate-free interposer and method forming same\" (US-10522449). https://patentable.app/patents/US-10522449","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522449","json":"https://patentable.app/api/llm-context/US-10522449","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:01:19.419Z"}