{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522460","patent":{"patent_number":"US-10522460","title":"Memory device and method for manufacturing same","assignee":null,"inventors":[],"filing_date":"2017-12-27T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A memory device includes a first conductive layer; a second conductive layer provided above the first conductive layer; a plurality of electrode layers stacked above the second conductive layer; a semiconductor pillar extending through the plurality of electrode layers and the second conductive layer, and connected to the first conductive layer; and a third conductive layer provided above the first conductive layer. The third conductive layer is positioned at a level substantially same as a level of the second conductive layer in an extension direction of the semiconductor pillar, and is made of a material same as a material of the second conductive layer. The third conductive layer is electrically isolated from the second conductive layer, and is electrically connected to the first conductive layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device and method for manufacturing same","description":"A memory device includes a first conductive layer; a second conductive layer provided above the first conductive layer; a plurality of electrode layers stacked above the second conductive layer; a sem","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522460","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522460","citation_suggestion":"Patentable. \"Memory device and method for manufacturing same\" (US-10522460). https://patentable.app/patents/US-10522460","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522460","json":"https://patentable.app/api/llm-context/US-10522460","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:09:19.785Z"}