{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522474","patent":{"patent_number":"US-10522474","title":"Staircase etch control in forming three-dimensional memory device","assignee":null,"inventors":[],"filing_date":"2018-07-26T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"Embodiments of three-dimensional (3D) memory devices and methods for controlling a photoresist (PR) trimming rate in the formation of the 3D memory devices are disclosed. In an example, a method includes forming a dielectric stack over a substrate, measuring a first distance between the first trimming mark and the PR layer along a first direction, and trimming the PR layer along the first direction. The method also includes etching the dielectric stack using the trimmed PR layer as an etch mask to form a staircase, forming a second trimming mark using the first trimming mark as an etch mask, measuring a second distance between the second trimming mark and the trimmed PR layer, comparing the first distance with the second distance to determine a difference between an actual PR trimming rate and an estimated PR trimming rate, and adjusting PR trimming parameters based on the difference."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Staircase etch control in forming three-dimensional memory device","description":"Embodiments of three-dimensional (3D) memory devices and methods for controlling a photoresist (PR) trimming rate in the formation of the 3D memory devices are disclosed. In an example, a method inclu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522474","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522474","citation_suggestion":"Patentable. \"Staircase etch control in forming three-dimensional memory device\" (US-10522474). https://patentable.app/patents/US-10522474","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522474","json":"https://patentable.app/api/llm-context/US-10522474","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:01:30.368Z"}