{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522482","patent":{"patent_number":"US-10522482","title":"Semiconductor device manufacturing method comprising bonding an electrode terminal to a conductive pattern on an insulating substrate using ultrasonic bonding","assignee":null,"inventors":[],"filing_date":"2018-12-31T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":1,"abstract":"An object of the present invention is to obtain a semiconductor device having highly reliable bonding portions. The semiconductor device according to the present invention includes an insulating substrate on which a conductive pattern is formed, and an electrode terminal and a semiconductor element which are bonded to the conductive pattern, the electrode terminal and the conductive pattern are bonded by ultrasonic bonding on a bonding face, and the ultrasonic bonding is performed at a plurality of positions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device manufacturing method comprising bonding an electrode terminal to a conductive pattern on an insulating substrate using ultrasonic bonding","description":"An object of the present invention is to obtain a semiconductor device having highly reliable bonding portions. The semiconductor device according to the present invention includes an insulating subst","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522482","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522482","citation_suggestion":"Patentable. \"Semiconductor device manufacturing method comprising bonding an electrode terminal to a conductive pattern on an insulating substrate using ultrasonic bonding\" (US-10522482). https://patentable.app/patents/US-10522482","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522482","json":"https://patentable.app/api/llm-context/US-10522482","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:57:50.007Z"}