{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522517","patent":{"patent_number":"US-10522517","title":"Half-bridge power semiconductor module and manufacturing method therefor","assignee":null,"inventors":[],"filing_date":"2015-05-25T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A module (1) includes an insulating substrate (15), a power semiconductor device (13HT), a power semiconductor device (13LT), a bridge terminal (14B), a high-side terminal (14H), and a low-side terminal (14L). The bridge terminal extends from a surface wiring conductor (12B) at a position between the power semiconductor devices (13HT, 13LT). The high-side terminal extends from a high-side rear surface wiring conductor (17H) at a position between the power semiconductor devices (13HT, 13LT). The low-side terminal extends from a low-side rear surface wiring conductor (17L) at a position between the power semiconductor devices (13HT, 13LT). A surface electrode of the power semiconductor device (13HT) and a rear electrode of the power semiconductor device (13LT) are connected to the surface wiring conductor (12B)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Half-bridge power semiconductor module and manufacturing method therefor","description":"A module (1) includes an insulating substrate (15), a power semiconductor device (13HT), a power semiconductor device (13LT), a bridge terminal (14B), a high-side terminal (14H), and a low-side termin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522517","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522517","citation_suggestion":"Patentable. \"Half-bridge power semiconductor module and manufacturing method therefor\" (US-10522517). https://patentable.app/patents/US-10522517","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522517","json":"https://patentable.app/api/llm-context/US-10522517","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:03:15.851Z"}