{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522525","patent":{"patent_number":"US-10522525","title":"Semiconductor device structure","assignee":null,"inventors":[],"filing_date":"2017-11-01T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device structure includes a first chip including a plurality of dielectric layers and a multi-layered metal structure embedded in the plurality of dielectric layer, a second chip bonded to the first chip to generate a bonding interface and including a metal structure, a first via structure extending through the first chip and crossing the bonding interface into the metal structure in the second chip, and a second via structure extending in the first chip and electrically connected to the multi-layered metal structure in the first chip. The first via structure further includes a first via metal and a first via dielectric layer, the first via dielectric layer interposes between the first via metal and the plurality of dielectric layers of the first chip and extends from the first chip to the metal structure in the second chip."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device structure","description":"A semiconductor device structure includes a first chip including a plurality of dielectric layers and a multi-layered metal structure embedded in the plurality of dielectric layer, a second chip bonde","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522525","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522525","citation_suggestion":"Patentable. \"Semiconductor device structure\" (US-10522525). https://patentable.app/patents/US-10522525","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522525","json":"https://patentable.app/api/llm-context/US-10522525","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T08:28:14.463Z"}