{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522543","patent":{"patent_number":"US-10522543","title":"Method for manufacturing gate structure with additional oxide layer","assignee":null,"inventors":[],"filing_date":"2018-08-06T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Methods for forming a semiconductor structure are provided. The method includes forming a first dummy gate structure and forming first spacers over a sidewall of the first dummy gate structure. The method includes removing the first dummy gate structure to form a first trench between the first spacers and forming a first capping layer in the first trench. A first portion of the first capping layer covers a sidewall of the first trench and a second portion of the first capping layer covers a bottom surface of the first trench. The method further includes oxidizing a sidewall of the first portion of the first capping layer and a top surface of the second portion of the first capping layer to form a first capping oxide layer and forming a first work function metal layer and forming a first gate electrode layer over the first work function metal layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing gate structure with additional oxide layer","description":"Methods for forming a semiconductor structure are provided. The method includes forming a first dummy gate structure and forming first spacers over a sidewall of the first dummy gate structure. The me","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522543","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522543","citation_suggestion":"Patentable. \"Method for manufacturing gate structure with additional oxide layer\" (US-10522543). https://patentable.app/patents/US-10522543","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522543","json":"https://patentable.app/api/llm-context/US-10522543","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:36:52.068Z"}