{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522549","patent":{"patent_number":"US-10522549","title":"Uniform gate dielectric for DRAM device","assignee":null,"inventors":[],"filing_date":"2018-02-17T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Provided herein are approaches for forming a gate dielectric layer for a DRAM device, the method including providing a substrate having a recess formed therein, the recess including a sidewall surface and a bottom surface. The method may further include performing an ion implant into just the bottom surface of the recess, and forming a gate dielectric layer along the bottom surface of the recess and along the sidewall surface of the recess. Once formed, a thickness of the gate dielectric layer along the sidewall surface is approximately the same as a thickness of the gate dielectric layer along the bottom surface of the recess. In some embodiments, the gate dielectric layer is thermally grown within the recess. In some embodiments, the ion implant is performed after a mask layer atop the substrate is removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Uniform gate dielectric for DRAM device","description":"Provided herein are approaches for forming a gate dielectric layer for a DRAM device, the method including providing a substrate having a recess formed therein, the recess including a sidewall surface","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522549","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522549","citation_suggestion":"Patentable. \"Uniform gate dielectric for DRAM device\" (US-10522549). https://patentable.app/patents/US-10522549","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522549","json":"https://patentable.app/api/llm-context/US-10522549","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:00:03.588Z"}