{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522555","patent":{"patent_number":"US-10522555","title":"Semiconductor devices including Si/Ge active regions with different Ge concentrations","assignee":null,"inventors":[],"filing_date":"2018-04-04T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"In semiconductor devices, some active regions may frequently have to be formed on the basis of a silicon/germanium (Si/Ge) mixture in order to appropriately adjust transistor characteristics, for instance, for P-type transistors. To this end, the present disclosure provides manufacturing techniques and respective devices in which at least two different types of active regions, including Si/Ge material, may be provided with a high degree of compatibility with conventional process strategies. Due to the provision of different germanium concentrations, increased flexibility in adjusting characteristics of transistor elements that require Si/Ge material in their active regions may be achieved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices including Si/Ge active regions with different Ge concentrations","description":"In semiconductor devices, some active regions may frequently have to be formed on the basis of a silicon/germanium (Si/Ge) mixture in order to appropriately adjust transistor characteristics, for inst","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522555","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522555","citation_suggestion":"Patentable. \"Semiconductor devices including Si/Ge active regions with different Ge concentrations\" (US-10522555). https://patentable.app/patents/US-10522555","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522555","json":"https://patentable.app/api/llm-context/US-10522555","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:23:15.306Z"}