{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522558","patent":{"patent_number":"US-10522558","title":"Semiconductor device and method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-11-13T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":12,"abstract":"A semiconductor device having a nonvolatile memory cell arranged in a p-type well (active region) PW1 in a memory cell region 1A in a semiconductor substrate 1 and an MISFET arranged in a p-type well PW2 (active region) or an n-type well (active region) in a peripheral circuit region 2A is constructed as follows. The surface of an element isolation region STI1 surrounding the p-type well PW1 is set lower than the surface of an element isolation region STI2 surrounding the p-type well PW2 or the n-type well (H1<H2). By making the surface of the element isolation region STI1 receded and lowered, the effective channel width of both a control transistor and a memory transistor can be increased. Since the surface of the element isolation region STI2 is not made receded, an undesired film can be prevented from being residual over a dummy gate electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing semiconductor device","description":"A semiconductor device having a nonvolatile memory cell arranged in a p-type well (active region) PW1 in a memory cell region 1A in a semiconductor substrate 1 and an MISFET arranged in a p-type well ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522558","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522558","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing semiconductor device\" (US-10522558). https://patentable.app/patents/US-10522558","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522558","json":"https://patentable.app/api/llm-context/US-10522558","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:22:15.066Z"}