{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522592","patent":{"patent_number":"US-10522592","title":"Tunnel magnetoresistive effect element, magnetic memory, and built-in memory","assignee":null,"inventors":[],"filing_date":"2017-10-16T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["G11C","H01L","H01L","G11C","G11C","H01L"],"num_claims":11,"abstract":"A TMR element includes a base layer that is disposed on an upper surface of a via interconnect part, a magnetic tunnel junction that is disposed on a surface of the base layer, and an interlayer insulation layer that covers a side surface of each of the via interconnect part and the base layer. The base layer includes a stress relieving region. The magnetic tunnel junction includes a reference layer having a magnetization fixed direction, a magnetization free layer, and a tunnel barrier layer disposed between the reference layer and the magnetization free layer. The interlayer insulation layer includes an insulation material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Tunnel magnetoresistive effect element, magnetic memory, and built-in memory","description":"A TMR element includes a base layer that is disposed on an upper surface of a via interconnect part, a magnetic tunnel junction that is disposed on a surface of the base layer, and an interlayer insul","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522592","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522592","citation_suggestion":"Patentable. \"Tunnel magnetoresistive effect element, magnetic memory, and built-in memory\" (US-10522592). https://patentable.app/patents/US-10522592","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522592","json":"https://patentable.app/api/llm-context/US-10522592","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:01:24.689Z"}