{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522633","patent":{"patent_number":"US-10522633","title":"Methods and structures of novel contact feature","assignee":null,"inventors":[],"filing_date":"2017-08-07T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A method of fabricating a semiconductor device is disclosed. The method includes forming a fin structure on a substrate; forming a dummy gate over the fin structure; forming spacers on sides of the dummy gate; forming a doped region within the fin structure; replacing the dummy gate with a metal gate; replacing an upper portion of the metal gate with a first dielectric layer; forming a conductive layer directly on the doped region; replacing an upper portion of the conductive layer with a second dielectric layer; removing the first dielectric layer thereby exposing a sidewall of the spacer; removing an upper portion of the spacer to thereby expose a sidewall of the second dielectric layer; removing at least a portion of the second dielectric layer to form a trench; and forming a conductive plug in the trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods and structures of novel contact feature","description":"A method of fabricating a semiconductor device is disclosed. The method includes forming a fin structure on a substrate; forming a dummy gate over the fin structure; forming spacers on sides of the du","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522633","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522633","citation_suggestion":"Patentable. \"Methods and structures of novel contact feature\" (US-10522633). https://patentable.app/patents/US-10522633","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522633","json":"https://patentable.app/api/llm-context/US-10522633","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:35:03.013Z"}