{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10522638","patent":{"patent_number":"US-10522638","title":"Semiconductor chip and power module, and manufacturing method of the same","assignee":null,"inventors":[],"filing_date":"2018-10-05T00:00:00.000Z","publication_date":"2019-12-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A semiconductor chip includes a semiconductor substrate made of SiC, a front surface electrode formed in a principal surface of the semiconductor substrate, and a rear surface electrode (drain electrode) formed in a rear surface of the semiconductor substrate. The front surface electrode is bonded to a wire, and includes an Al alloy film containing a high melting-point metal. The Al alloy film contains a columnar Al crystal which extends along a thickness direction of the Al alloy film, and an intermetallic compound is precipitated therein."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor chip and power module, and manufacturing method of the same","description":"A semiconductor chip includes a semiconductor substrate made of SiC, a front surface electrode formed in a principal surface of the semiconductor substrate, and a rear surface electrode (drain electro","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10522638","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10522638","citation_suggestion":"Patentable. \"Semiconductor chip and power module, and manufacturing method of the same\" (US-10522638). https://patentable.app/patents/US-10522638","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10522638","json":"https://patentable.app/api/llm-context/US-10522638","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:38:46.564Z"}